
<oai_dc:dc xmlns:dc="http://purl.org/dc/elements/1.1/" xmlns:oai_dc="http://www.openarchives.org/OAI/2.0/oai_dc/">
  <dc:date>2022</dc:date>
  <dc:language>eng</dc:language>
  <dc:creator id="https://orcid.org/0000-0001-6797-2435">Požega, Emina</dc:creator>
  <dc:creator>Radičević, Anja</dc:creator>
  <dc:creator id="https://orcid.org/0000-0001-7945-693X">Simonović, Danijela</dc:creator>
  <dc:creator id="https://orcid.org/0000-0002-9815-6884">Petrović, Ana</dc:creator>
  <dc:creator id="https://orcid.org/0000-0001-8584-746X">Stanojević Šimšić, Zdenka</dc:creator>
  <dc:creator id="https://orcid.org/0000-0001-5905-6613">Rajković, Radmilo</dc:creator>
  <dc:creator id="https://orcid.org/0000-0001-7659-769X">Mikić, Miomir</dc:creator>
  <dc:identifier>https://unilib.phaidrabg.rs/o:3921</dc:identifier>
  <dc:identifier>cobiss:136621833</dc:identifier>
  <dc:type>info:eu-repo/semantics/conferenceProceedings</dc:type>
  <dc:source>Proceedings: International October Conference on Mining and Metallurgy (53 ; 2022 ; Bor)</dc:source>
  <dc:rights>All rights reserved</dc:rights>
  <dc:title xml:lang="eng">Electronic transport properties of the Bi0.5As1.5Te2.98Se0.02 single crystal. Pt. 2</dc:title>
  <dc:subject xml:lang="eng">Keywords: electronic transport properties, Hall and Van der Pauw method, single crystal.</dc:subject>
  <dc:format>application/pdf</dc:format>
  <dc:format>1233563 bytes</dc:format>
  <dc:description xml:lang="eng">Abstract: This work present the effect of arsenic on the BiTeSe bulk single crystal synthesis by the Bridgman method.
Bulk single crystal growth was achieved by the spontaneous nucleation. The bismuth telluride thermoelectric material with the composition of Bi0.5As1.5Te2.98Se0.02 was obtained. During the experiment, the values of conductivity (σ), resistivity (ρ), Hall coefficient (RH), magnetic resistance (ΔR) and vertical/horizontal resistance ratio (α) were studied using the Hall Effect system, based on the Van der Pauw method. The Hall Effect was measured at temperature of liquid nitrogen with silver contacts with the applied magnetic field strength of 0.37 T at current intensities of 1, 5 and 10 mA.</dc:description>
</oai_dc:dc>
